Advancing Silicon Carbide Electronics Technology I: Metal Contacts to Silicon Carbide: Physics, Technology, Applications (37) (Materials Research Foundations)

The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.

• | Author: Konstantinos Zekentes, Konstantinos Zekentes
• | Publisher: Materials Research Forum LLC
• | Publication Date: Sep 25, 2018
• | Number of Pages: 250 pages
• | Language: English
• | Binding: Paperback
• | ISBN-10: 1945291842
• | ISBN-13: 9781945291845