MOSFETs: With insight & intuition...

This 61-page handbook uses insight to explain how metal-oxide-semiconductor (MOS) field-effect transistors (FETs) block and conduct current in sub-threshold, weak inversion, and inversion. It describes how MOSFETs accumulate, deplete, and invert their channels and how they saturate their currents in sub-threshold and inversion. It also discusses body effect, how gate-channel oxide capacitance distributes across operating regions, and short-channel effects, like drain-induced barrier lowering (DIBL), surface scattering, hot-electron injection, oxide-surface ejections, velocity saturation, and impact ionization and avalanche. Discussions extend to varactors, MOS diodes, lightly doped drains (LDD), diffused-channel MOSFETs (DMOS), junction isolation, substrate MOSFETs, welled MOSFETs, and electronic and systemic noise coupling and injection. Illustrative figures, equations, and examples complement discussions throughout.

• | Author: Gabriel Alfonso Rinc�n-Mora
• | Publisher: Independently published
• | Publication Date: July 03, 2019
• | Number of Pages: 76 pages
• | Language: English
• | Binding: Paperback
• | ISBN-10: 107788821X
• | ISBN-13: 9781077888210