Stress And Strain Engineering At Nanoscale In Semiconductor Devices

Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this monograph encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicon-germanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features: Covers Stress-Strain engineering in semiconductor devices such as FinFETs and III-V Nitride based Devices. Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations. Explains development of strain/stress relationships and their effects on the band structures of strained substrates. Uses design of experiments to find the optimum process conditions. Illustrates use of TCAD for modeling of strain-engineered FinFETs for DC and AC performance predictions. This book aims at graduate students and researchers in solid state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, electronic material and devices.

• | Author: Chinmay K. Maiti
• | Publisher: CRC Press
• | Publication Date: June 30, 2021
• | Number of Pages: 260 pages
• | Language: English
• | Binding: Hardcover
• | ISBN-10: 0367519291
• | ISBN-13: 9780367519292